Thermal stability of electrical parameters of silicon crystal doped with nickel during growth

Abstract

This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours). This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.

Identifiers

DOI

10.15407/spqeo25.01.006

Citations and references