Resistivity of Bulk Silicon and of Diffused Layers in Silicon

Abstract

Measurements of resistivity and impurity concentration in heavily doped silicon are reported. These and previously published data are incorporated in a graph showing the resistivity (at T = 300°K) of n- and p-type silicon as a function of donor or acceptor concentration. The relationship between surface concentration and average conductivity of diffused layers in silicon has been calculated for Gaussian and complementary error function distributions. The results are shown graphically. Similar calculations for subsurface layers, such as a transistor base region, are also given.

Identifiers

DOI

10.1002/j.1538-7305.1962.tb02415.x

Citations and references