Efficient 3.3 µm light emitting diodes for detecting methane gas at room temperature
M.K. ParryApplied Physics Division, Lancaster University, Lancaster, LA1 4YB, United KingdomA. KrierApplied Physics Division, Lancaster University, Lancaster, LA1 4YB, United Kingdom
1994en
ABI
Abstract
In0.97Ga0.03As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 3.3 µm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications.
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