Photovoltaic X-ray detectors based on epitaxial GaAs structures
R.A. AchmadullinFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaV. F. DvoryankinFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaG. G. DvoryankinaFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaYu. M. DikaevFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaM.G. ErmakovFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaO.N. ErmakovaFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaА. И. КрикуновFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaA. A. KudryashovFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaА. Г. ПетровFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, RussiaА. V. TeleginFryazino Branch, Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
2002en
ABI
Abstract
A new type of the photovoltaic X-ray detector based on epitaxial p +-n-n′-n + GaAs structures is proposed, which provides for a high efficiency of charge carrier collection in a nonbiased operation regime at room temperature. The GaAs structures were grown by vapor phase epitaxy on heavily doped n +-GaAs substrates. The X-ray sensitivity range covers the effective energies from 8 to 120 keV. The maximum output signal in the short-circuit regime is 30 μA min/(Gy cm2). The detector response to γ-radiation from a 137Cs[660 keV] radioactive isotope was measured.
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