Article

Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

C.A WangLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USAD.A. ShiauLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USAAnn LinLincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02420-9108, USA

2003en

ABI

Abstract

No abstract available.

Identifiers

DOI: 10.1016/j.jcrysgro.2003.11.032

Citations and references

Cited by 20 references

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