The non-radiative decay of free excitons as mediated by ionized donors in semiconductors
Jai SinghDept. of Math., Univ. of Southampton, Southampton, UKP LandsbergDept. of Math., Univ. of Southampton, Southampton, UK
1976en
ABI
Abstract
The probability of free-exciton decay in the presence of an ionized donor in a crystal, which leads to the neutralization of the ionized donor and the creation of a free hole, is suggested to be of the order of 0.5*10-5nd+ cm-3 s-1 in Si and GaP, and 0.2*10-4nd+ cm-3 s-1 in Ge, where nd+ is the concentration of ionized donors. These results are derived by means of a modification of a theory by Trlifaj, the limitations of which are pointed out.
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