Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
С. В. ТиховLobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, RussiaО. Н. ГоршковLobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, RussiaM. N. KoryazhkinaLobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, RussiaИ. Н. АнтоновLobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, RussiaА. П. КасаткинLobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia
2016en
ABI
Abstract
We have studied light-induced resistive switching in metal–insulator–semiconductor structures based on silicon covered with a tunneling-thin SiO2 layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.
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Cited by 20 references