Quantum size effects on photoluminescence in ultrafine Si particles
H. TakagiCanon Research Center, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 JapanH. OgawaCanon Research Center, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 JapanYuzo YamazakiCanon Research Center, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 JapanA. IshizakiCanon Research Center, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 JapanT. NakagiriCanon Research Center, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 Japan
1990en
ABI
Abstract
Visible photoluminescence was observed in ultrafine Si particles at room temperature. Transmission electron microscopy revealed that Si microcrystallites were embedded in a Si oxide matrix for the sample which emitted the light. The emission energy depended on crystallite size in the range from 2.8 to 5 nm. The inverse relation between emission energy and the square of the crystallite size indicates that carrier confinement in the Si microcrystallites causes this photoluminescence phenomenon.
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