Ballistic injection of electrons in metal-semiconductor junctions. I. Phonon spectroscopy and impurity-enhanced inelastic scattering in n⁺silicon

Abstract

Results are presented on the ballistic injection of electrons into n+ silicon from aluminium point contacts. The principle phonons responsible for intervalley scattering are identified, and it is shown that new scattering modes are introduced by impurities. The introduction of these modes, and the enhancement of the electron coupling to modes always present, depends on the impurity species. Higher-energy structure is observed and is attributed to two closely separated plasmons. The origin of this separation is unclear.

Identifiers

DOI

10.1088/0022-3719/13/26/004

Citations and references