Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress
Ivan A. StarkovInstitute for Microelectronics, Vienna University of Technology, Gußhausstraße 27-29, A-1040 Vienna, AustriaA. S. StarkovInstitute of Refrigeration and Biotechnology, National Research University of Information Technologies, Mechanics and Optics, Kronverksky pr. 49, 197101 St. Petersburg, Russia
2013en
ABI
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Cited by 30 references