Study of the “Blocking Effect” for Fast Electrons in a Silicon Crystal
Д. Е. ПоповInstitute of Nuclear Physics, Polytechnieal Institute, TomskС. В. ПлотніковInstitute of Nuclear Physics, Polytechnieal Institute, TomskV. V. KaplinInstitute of Nuclear Physics, Polytechnieal Institute, TomskS.A. VorobievInstitute of Nuclear Physics, Polytechnieal Institute, Tomsk
ABI
Abstract
Abstract The effect of intensity inversion in the patterns of angular distribution of the electrons with energies up to 2.5 MeV scattered along the low‐index directions of a thin silicon crystal is studied. This phenomenon is observed when the angle of beam incidence relative to a low‐index axis of the crystal is large compared with the critical angle of channeling. The discussion is given in the scope of a model based upon bound states of channeled electrons, as a result of excitation of secondary bound states of electrons with atomic rows and planes.