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Composition determination of multicomponent chalcogenide glassy semiconductors with X-ray fluorescence analysis

Г. А. БордовскийHertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, RussiaА. В. МарченкоHertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, RussiaM. Yu. Kozhokar’Hertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, RussiaФ. С. НасрединовSt. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, RussiaП. П. СерегинHertsen State Pedagogical University of Russia, nab. Moiki 48, St. Petersburg, 191186, Russia
2013en
ABI

Abstract

The standard method-recording of X-ray fluorescence spectra of a standard Ge0.2As0.4Se0.4 alloy followed by evaluation of its component spectral fractions and by building of dependences x XRF = f(x) and y XRF = f(y) for the As x (Ge y Se1 − y )1 − x system—was employed to determine the quantitative contents of arsenic, germanium, and selenium in the Ge t As s Se1 − t − s glassy alloys with X-ray fluorescence analysis. The accuracy of the composition’s determination was ±0.0005 for both x and y. However, it was not possible to use the external standard method for determining the tellurium in As y Se1 − y )1 − x Te x alloys because tellurium, arsenic, and selenium had significantly different X-ray fluorescence characteristics and, hence, substitution of the arsenic or selenium for tellurium at a fixed y resulted in tellurium emission fraction changing.

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