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Vertical junction Si cells for concentrating photovoltaics

Roni PoznerFaculty of Engineering Tel Aviv University Tel Aviv 69978 IsraelGideon SegevFaculty of Engineering Tel Aviv University Tel Aviv 69978 IsraelR. SarfatyElectrical and Electronics Department Ort Braude College Karmiel 21982 IsraelAbraham KribusFaculty of Engineering Tel Aviv University Tel Aviv 69978 IsraelY. RosenwaksFaculty of Engineering Tel Aviv University Tel Aviv 69978 Israel
2011en
ABI

Abstract

ABSTRACT Vertical junction Si cell has shown a potential to operate at high concentrations, mainly the result of reduced series resistance losses due to its low‐current/high‐voltage design, but tests and analyses have so far only shown a modest efficiency of about 20%. We perform a comprehensive optimization study and show that the conversion efficiency of vertical multi‐junction (VMJ) cells can be significantly higher, close to 30% at concentrations of 1000 and higher. Reaching this efficiency requires junction dimensions that are significantly smaller than previous VMJ cells. This may require a different approach in the fabrication process, possibly by using a monolithic method rather than the wafer stacking approach. We also show that increased photoconductivity, which is usually negligible in conventional cells, produces a significant reduction in series resistance at high concentrations making it a significant contributor to the outstanding performance of the VMJ cell at high concentration. Copyright © 2011 John Wiley & Sons, Ltd.

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