ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
A. BakinInstitute of Semiconductor Technology, Technical University of Braunschweig, Brunswick, GermanyArne BehrendsInstitute of Semiconductor Technology, Technical University of Braunschweig, Brunswick, GermanyA. WaagInstitute of Semiconductor Technology, Technical University of Braunschweig, Brunswick, GermanyHans‐Jürgen LugauerOsram Opto Semiconductors GmbH and Company, Regensburg, GermanyA. LaubschOsram Opto Semiconductors GmbH and Company, Regensburg, GermanyK. StreubelOsram Opto Semiconductors GmbH and Company, Regensburg, Germany
2010en
ABI
Abstract
Reliable and reproducible p-type doping is the main challenge for fabricating highly efficient ZnO-based light-emitting diodes. During the last few years, the lack of reliable p-type conductivity in ZnO has initiated research concerning the combination of ZnO and other semiconductors, which can then be doped p-type. One of these concepts is the combination of ZnO with GaN heterostructures aiming at the fabrication of hybrid LEDs. We discuss the problems as well as potential benefits from a combination of ZnO and GaN hybrid heterostructures in a single device. We also present our recent results on ZnO-GaN hybrid LEDs using an inverted LED concept. The hybrid LEDs have an external quantum efficiency of more than 35%.
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Cited by 20 references