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Works cited by this work

20 works

Work: Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

  1. Band nonparabolicity effects in semiconductor quantum wells

    D. F. Nelson, Robert C. Miller, D. A. Kleinman

    Article19879 citations
    ABI

  2. Electronic States in Semiconductor Heterostructures

    G. Bastard, J. A. Brum, R. Ferreira

    Chapter19915 citations
    ABI

  3. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    И. С. Васильевский, Г. Б. Галиев, E. A. Klimov +7

    Article20112 citations
    ABI

  4. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

    Fei Xue, Han Zhao, Yen‐Ting Chen +3

    Article20112 citations
    ABI

  5. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

    А. Л. Васильев, И. С. Васильевский, Г. Б. Галиев +6

    Article20112 citations
    ABI

  6. Submicron Gate-Fitted Superconducting Junction Using a Two-Dimensional Electron Gas

    Hideaki Takayanagi, Tatsushi Akazaki

    Article19952 citations
    ABI

  7. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

    Г. Б. Галиев, И. С. Васильевский, E. A. Klimov +4

    Article20152 citations
    ABI

  8. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

    Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

    Article20122 citations
    ABI

  9. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

    J. Ajayan, D. Nirmal, P. Prajoon +1

    Article20172 citations
    ABI

  10. Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells

    M. Yu. Chernov, Victor A. Solov’ev, O. S. Komkov +6

    Article20172 citations
    ABI

  11. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

    S. V. Ivanov, M. Yu. Chernov, В. А. Соловьев +3

    Article20182 citations
    ABI

  12. Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications

    Murali Krishna, M M Rahool, K. Dinesh Kumar +2

    Article20212 citations
    ABI

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