High-voltage solar elements based on polycrystalline silicon
E. MukhtarovAndizhan State University, Andizhan, Republic of UzbekistanР. АлиевAndizhan State University, Andizhan, Republic of Uzbekistan
ABI
Abstract
Problems connected with developing designs of high-voltage solar elements (SE) with vertical p- n transitions on the basis of polycrystalline silicon and also the results of analysis of new experimental data are considered. The photoelectric characteristics of SE with unilateral and bilateral illumination are presented. The prospects of using these SE in solar modules with parabolic-spherical and parabolic-cylindrical radiation concentrators are discussed.