Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm
Mengyu ChenDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong KongHaipeng LuDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong KongNema M. AbdelazimDepartment of Physics and Materials Science
and Centre for Functional Photonics (CFP) City University of Hong Kong, Kowloon, Hong Kong S. A. RYe ZhuDepartment
of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong S. A. RZhen WangDepartment of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong KongWei RenDepartment of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong KongStephen V. KershawDepartment of Physics and Materials Science
and Centre for Functional Photonics (CFP) City University of Hong Kong, Kowloon, Hong Kong S. A. RAndrey L. RogachDepartment of Physics and Materials Science
and Centre for Functional Photonics (CFP) City University of Hong Kong, Kowloon, Hong Kong S. A. RNi ZhaoDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong
2017en
ABI
Abstract
(at 2 kHz modulation frequency) specific detectivity beyond the 2 μm wavelength range, which is comparable to commercial epitaxial-grown photodetectors. To demonstrate the practical application of the QD phototransistor, we incorporated the device in a carbon monoxide gas sensing system and demonstrated reliable measurement of gas concentration. This work represents an important step forward in commercializing QD-based infrared detection technologies.
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