Article

2.7-eV luminescence in as-manufactured high-purity silica glass

Ryoichi TohmonDepartment of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, JapanYasushi ShimogaichiDepartment of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, JapanHiroyasu MizunoDepartment of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, JapanYoshimichi OhkiDepartment of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, JapanKaya NagasawaDepartment of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, JapanYoshimasa HamaDepartment of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169, Japan

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Abstract

The nature of the 2.7-eV photoluminescence in as-manufactured oxygen-deficient high-purity silica glasses is studied. Luminescence lifetime measurements and ab initio molecular-orbital calculations are consistent with the luminescence being a triplet-to-ground transition of a neutral oxygen-vacancy defect (?Si-Si?).

Identifiers

DOI: 10.1103/physrevlett.62.1388

Citations and references

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