Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
J. KakaliosXerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304R. A. StreetXerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304W. B. JacksonXerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
1987en
ABI
Abstract
In this paper we find that the stretched-exponential relaxation commonly observed in disordered systems is explained by time-dependent atomic diffusion. The relaxation is observed in the electronic properties of hydrogenated amorphous silicon (a-Si:H), a ``hydrogen glass'' material, and reflects the equlibration of localized electronic states. The relaxation is attributed to the motion of bonded hydrogen which exhibits dispersive diffusion with a characteristic power-law time dependence. A quantitative relation between the relaxation and the diffusion is established.
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