Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline

Abstract

Scope1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by infrared spectroscopy. This test method requires the use of an oxygen-free reference specimen and a set of calibration standards, such as t

Identifiers

DOI

10.1520/f1188-00

Citations and references