Negative-U Properties for Point Defects in Silicon
G. D. WatkinsDepartment of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015John R. TroxellDepartment of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015
1980en
ABI
Abstract
Experimental evidence is presented in support of a recent suggestion by Baraff, Kane, and Schl\"uter that the isolated lattice vacancy in silicon is an Anderson negative-$U$ system. The second donor level (+/++) (of charge state + if defect level is occupied by an electron; ++, if unoccupied) is located at ${E}_{v}+0.13$ eV, above a first donor level (0/+) at ${E}_{v}+0.05$ eV. Evidence is presented that interstitial boron has negative-$U$ properties with a single donor level (0/+) at ${E}_{c}\ensuremath{-}0.13$ eV, above a single acceptor level (-/0) at ${E}_{c}\ensuremath{-}0.45$ eV.
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