Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation
K. L. SafonovD. V. KulikovA.F. Ioffe Physico-Technical Institute (Russia)Yuri V. TrushinSt. Petersburg State Technical Univ. and A.F. Ioffe Physico-Technical Institute (Russia)Joerg PezoldtTechnische Univ. Ilmenau (Germany)
2002en
ABI
Abstract
The processes of SiC clusters growth on Si(111) surface has been investigated theoretically. The SiC cluster formation and growth on Si surface stimulated by deposition of elemental carbon onto Si(111) with molecular beams have been studied by applying the kinetic equations (co-called rate equations) method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with the experimental data. Obtained cluster capture rates agree with KMC investigations.
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Cited by 20 references