Article

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu AkasakiNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanHiroshi AmanoNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanYasuo KoideNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanKazumasa HiramatsuNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanNobuhiko SawakiNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, Japan

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DOI: 10.1016/0022-0248(89)90200-5

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Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 &lt; x ≦ 0.4) films grown on sapphire substrate by MOVPE

Abstract

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Citations and references

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE