Article

‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si

Arrigo AddamianoNaval Research Laboratory, Washington, D.C. 20375J.A. SpragueNaval Research Laboratory, Washington, D.C. 20375

1984en

ABI

Abstract

The nature of the buffer layers needed for the single crystal deposition of cubic SiC on Si substrates was studied. It is concluded that the buffer layer is a stressed monocrystalline layer of cubic SiC.

Identifiers

DOI: 10.1063/1.94820

Citations and references

Cited by 20 references

Metrics — AkademScholar