On a New Photogalvanic Effect Due to Free‐Carrier Absorption
F. HennebergerSektion Physik der Humboldt-Universität zu Berlin, Bereich HalbleiteroptikN. S. AverkievA. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, LeningradRustam Yavkachovich RasulovA. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad
1982en
ABI
Abstract
Abstract A new photocurrent induced by optical orientation of free carriers under intraband absorption is theoretically investigated. Using a one‐band model it is shown that this current originates from interferences between harmonic and anharmonic processes of the electron–phonon interaction. A general expression for the current is derived for both, linear and circular polarized light. As an example the temperature dependence of the current is calculated for tellurium.
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