Gallium arsenide: A new material to accomplish passively mode-locked Nd:YAG laser
Zhuhong ZhangShanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of ChinaLiejia QianShanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of ChinaDianyuan FanShanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of ChinaXiming DengShanghai Institute of Optics and Fine Mechanics, Academia Sinica, P. O. Box 800-211, Shanghai 201800, People’s Republic of China
1992en
ABI
Abstract
A passively mode-locked Nd:YAG laser using a semi-insulating GaAs is accomplished. Ultrashort pulses, shorter than 10 ps, with an energy of 10 μJ per pulse are obtained. The dynamics of the pulse formation is described.
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Cited by 30 references