An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation
V. T. TulanovUlugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanKh. B. SiyabekovUlugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanA.Sh. DavletovaUlugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, UzbekistanKamila A. OrtaevaUlugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan
ABI
Abstract
An ionization-type semiconductor converter of infrared images that operates in the pulsed mode at a temperature of 77 K was studied. It is shown that it is possible to control the spectral range of photoconverter’s photosensitivity (λ=5–10.6 µm) by short-wavelength illumination of photodetector included in the converter. The response time of the converter is ∼5×10−7 s.