New III–V semiconductor lasers emitting near 2.6 μm
А. Н. БарановEquipe de Microoptoélectronique de Montpellier (EM2), URA CNRS 392, Université de Montpellier II, 34095 Montpellier Cédex 05, FranceV. V. SherstnevEquipe de Microoptoélectronique de Montpellier (EM2), URA CNRS 392, Université de Montpellier II, 34095 Montpellier Cédex 05, FranceC. AlibertEquipe de Microoptoélectronique de Montpellier (EM2), URA CNRS 392, Université de Montpellier II, 34095 Montpellier Cédex 05, FranceA. KrierAdvanced Materials Division, School of Physics and Chemistry, University of Lancaster, Lancaster LA1 4YB, United Kingdom
1996en
ABI
Abstract
Lasing has been obtained near 2.6 μm in double-heterostructure InGaAs/InAlAs diode lasers grown by metalorganic vapor phase epitaxy on InAs substrates. At 80 K threshold currents are in the range of 40–200 mA for lasers of deep mesa geometry. The characteristic temperature of the temperature dependence of the threshold current T0 is 21–23 K and lasing was achieved up to 150 K in a pulsed regime. A blueshift of up to 3.0 nm with increasing current is observed. A blueshift is also observed with increasing temperature, which is attributed to refractive index change due to the strong temperature dependence of the threshold carrier density in narrow gap III–V semiconductor lasers.
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