2.7-μm InGaAsSb/AlGaAsSb laser diodes with continuous-wave operation up to −39 °C
D.Z. GarbuzovDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300Ramon U. MartinelliDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300R. MennaDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300P. K. YorkDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300H. LeeDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300S.Y. NarayanDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300J.C. ConnollyDavid Sarnoff Research Center, CN5300, Princeton, New Jersey 08543-5300
1995en
ABI
Abstract
We have demonstrated continuous wave operation of 2.7-μm InGaAsSb/AlGaAsSb multiquantum-well diode lasers up to a temperature of 234 K (−39 °C). These devices were grown by molecular-beam-epitaxy. They have a tendency to operate in a dominant single mode over well-defined temperature and current intervals. A comparison of spontaneous emission spectra shows that above threshold, the quasi-Fermi level is pinned and that most of the carriers are injected into nonlasing states. This effect leads to a rapid decrease of differential efficiency with increasing temperature.
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