Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
Isamu AkasakiDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanHiroshi AmanoDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanShigetoshi SotaDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanHiromitsu SakaiDepartment of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JapanToshiyuki TanakaPioneer Electronic Corporation, 1-1 Fujimi 6-chome, Tsurugashima-shi, Saitama 350-02, JapanMasayoshi KoikeToyoda Gosei Co., Ltd., 1 Nagahata, Ochiai, Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
1995en
ABI
Abstract
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.
Identifiers
Citations and references
Cited by 20 references