Electrostatic force microscopy: principles and some applications to semiconductors
Paul GirardLaboratoire d'Analyse des Interfaces et de Nanophysique (UMR CNRS 5011), Université de Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex, France
2001en
ABI
Abstract
The current state of the art of electrostatic force microscopy (EFM) is presented. The principles of EFM operation and the interpretation of the obtained local voltage and capacitance data are discussed. In order to show the capabilities of the EFM method, typical results for semiconducting nanostructures and lasers are presented and discussed. Improvements to EFM and complementary electrical methods using scanning microscopy demonstrate the continuing interest in electrical probing at the nanoscale range.
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