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Temperature dependence and activation parameters of creep in Zn in the temperature range 1.5 to 80 °K

A. I. OsetskiiPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. P. SoldatovPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. I. StartsevPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovВ. Д. НацикPhysico-Technical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
1974en
ABI

Abstract

Data necessary to determine the activation energy and volume of the creep process in zinc have been obtained in the temperature range 1.5 to 80 °K by means of a differential technique. While calculating the activation parameters the influence of quantum phenomena on fluctuation-induced dislocation motion over local barriers of the crystal lattice were taken into account. The analysis of the dependences of the activation parameters on temperature and effective stress shows that below a certain characteristic temperature θ, which for zinc is equal to 26 °K, the activation parameters should be calculated using quantum formulas, whereas for T > θ they may be calculated using conventional classical formulas. The obtained values of the activation parameters and their temperature dependences form a basis used to make conclusions about the nature of obstacles controlling the low-temperature creep in Zn. [Russian Text Ignored]

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