Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
A. E. BelyaevV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, UkraineVolodymyr V. BasanetsOrion Research Institute, ul. Eugene Pottier 8a, Kyiv, 03057, UkraineН. С. БолтовецOrion Research Institute, ul. Eugene Pottier 8a, Kyiv, 03057, UkraineА. В. ЗоренкоOrion Research Institute, ul. Eugene Pottier 8a, Kyiv, 03057, UkraineЛ. М. КапитанчукE.O. Paton Electric Welding Institute, National Academy of Sciences of Ukraine, ul. Bozhenko 11, Kyiv, 03680, UkraineV.P. KladkoV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, UkraineР. В. КонаковаV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, UkraineНаталья Владимировна КолесникOrion Research Institute, ul. Eugene Pottier 8a, Kyiv, 03057, UkraineT. V. KorostinskayaOrion Research Institute, ul. Eugene Pottier 8a, Kyiv, 03057, UkraineT. V. KritskayaOrion Research Institute, ul. Eugene Pottier 8a, Kyiv, 03057, UkraineYa. Ya. KudrykV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, UkraineA. V. KuchukV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, UkraineВ. В. МиленинV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, UkraineA. B. AtaubaevaV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, Ukraine
2011en
ABI
Abstract
The thermal limits of the two-drift impact avalanche and transit-time (IMPATT) diode operating in the pulsed mode in the 8-mm wavelength region with a microwave power as high as 30–35 W have been estimated. It is shown that p-n junction overheat at an operating pulse length of 300 ns and a supply current amplitude of 11.3–15 A amounts to 270–430°C relative to an ambient medium. The temperature limit of junction overheating, above which IMPATT diodes rapidly degrade, was determined as 350°C. The presented results of X-ray phase analysis and depth profiles of Au-Pt-Ti-Pd-Si ohmic contact components confirm thermal limits of the IMPATT diode operating in the pulsed mode.
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Cited by 20 references