States in the Gap in Glassy Semiconductors

Abstract

A model is discussed which for the first time provides a unified description of many electrical and optical properties of chalcogenide glasses. It is proposed that localized gap states are at dangling bonds, and that lattice-distortion effects are sufficiently strong that these states exhibit an effective negative electron-electron correlation energy.

Identifiers

DOI

10.1103/physrevlett.35.1293

Citations and references