Electron Channeling in Si, Ag, and Au Crystals
Steinar AndersenInstitute of Physics, University of Aarhus, DK-8000 Aarhus C, DenmarkF. BellInstitute of Physics, University of Aarhus, DK-8000 Aarhus C, DenmarkFinn FrandsenInstitute of Physics, University of Aarhus, DK-8000 Aarhus C, DenmarkE. UggerhøjInstitute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
1973en
ABI
Abstract
Electron-channeling experiments have been performed on Si, Ag, and Au single crystals with energies between 0.5 and 3 MeV, using the Rutherford scattering technique. The influence of multiple scattering was studied by varying the target thickness. The results are discussed within the framework of the dynamical theory of diffraction and Lindhard's classical model. Quantitative measurements on the reciprocity theorem reveal that it is possible to link the enhancement in Rutherford scattering yields with Kikuchi defect bands in the forward direction. This connection can be described quantitatively by a recent Kikuchi-band theory.
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