Quantum interference devices made from superconducting oxide thin films
R. H. KochIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598C. P. UmbachIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598G. J. ClarkIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598P. ChaudhariIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598R. B. LaibowitzIBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
1987en
ABI
Abstract
We have fabricated superconducting quantum interference devices (dc SQUID’s) from thin films of the superconducting oxide YBa2Cu3Oy. The devices were made by first lithographically patterning an ion implant mask containing a 40 by 40 μm loop and two 17-μm-wide weak links over a ∼1-μm-thick oxide film. Ion implantation was then used to destroy the superconductivity in the film surrounding the device without actually removing material, resulting in a completely planar structure for the SQUID’s. The SQUID’s were operated in the temperature range from 4.2 to 68 K. The superconducting flux quantum was measured to be h/2e in these materials.
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