Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon
M. S. BreslerA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaO. B. GusevA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaV. Kh. KudoyarovaA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaAlexey N. Kuznetsov∥A. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaP. E. PakA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaЕ. И. ТеруковA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaI. N. YassievichA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaB. P. ZakharchenyaA. F. Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaW. FuhsFachbereich Physik, Philipps-Universität Marburg, D-35032 Marburg, GermanyArnd SturmFachbereich Physik, Philipps-Universität Marburg, D-35032 Marburg, Germany
1995en
ABI
Abstract
A comparison of the photoluminescence of Er-doped hydrogenated amorphous silicon and crystalline silicon a-Si:H(Er) and c-Si(Er), is presented. It is shown that a-Si:H(Er) exhibits efficient room-temperature photoluminescence at 1.537 μm which is as strong as the emission from optimized c-Si(Er) at 2 K. Most remarkably, there is practically no temperature quenching of the emission intensity in the range 2–300 K. The experiments suggest that the lifetime connected with the Er-induced emission is considerably shorter in a-Si:H(Er) than in c-Si(Er) which may be responsible for the different dependences of the photoluminescence intensity on the temperature, chopping frequency, and excitation power.
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