Electrolytic Shaping of Germanium and Silicon

Abstract

Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.

Identifiers

DOI

10.1002/j.1538-7305.1956.tb02385.x

Citations and references