Fine structure of voltage levels in the <i>I</i>-<i>V</i> characteristics of the rf SQUID’s
Eshel Ben‐JacobDepartment of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, IsraelDavid W. AbrahamDepartment of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, Israel
1981en
ABI
Abstract
Results of digital numerical calculations of the rf-(SQUID) superconducting quantum interference device dynamics and I-V characteristics are presented. Fine structure of voltage levels in the I-V characteristics were found. We have introduced thermal noise effects via Langevin term in the equations of motion. The thermal noise causes transitions between the voltage levels. In the case of a SQUID with an underdamped junction, negative slope can be observed, which is due to to the transition to the lower voltage levels.
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