Influence of Substrate Temperature on GaAs Epitaxial Deposition Rates

Abstract

The effects of substrate temperature on the GaAs deposition rates were studied for {111}A, {112}A, {113}A, {115}, {100}, {113}B, {112}B, and {111}B substrate orientations. An open tube chloride transport system with elemental gallium and arsenic sources was employed. This apparatus allowed independent control over the gallium monochloride, arsenic, and hydrogen chloride partial pressures. The sensitivity of the deposition rate to substrate orientation is observed to be strongly temperature dependent. Experimental evidence is provided which indicates that the deposition rate is kinetically limited in the temperature range from 725° to 800 °C.

Identifiers

DOI

10.1149/1.2411231

Citations and references