High-efficiency Cr-MIS solar cells on single and polycrystalline silicon
Wayne A. AndersonRutgers University, Electrical Engineering Department, P. O. Box 909, Piscataway, New Jersey 08854A. E. DelahoyRutgers University, Electrical Engineering Department, P. O. Box 909, Piscataway, New Jersey 08854J. K. KimRutgers University, Electrical Engineering Department, P. O. Box 909, Piscataway, New Jersey 08854Sylvia HylandRutgers University, Electrical Engineering Department, P. O. Box 909, Piscataway, New Jersey 08854Subhajit DeyRutgers University, Electrical Engineering Department, P. O. Box 909, Piscataway, New Jersey 08854
1978en
ABI
Abstract
Cr-MIS solar cells having a 2-cm2 area have been fabricated to produce 12.2% efficiency on single crystal and 8.8% efficiency on polycrystalline Si. Surface-state data were used to predict open-circuit voltages of 0.60 and 0.50 V, respectively, for the single-crystal and polycrystalline Si. Spectral response measurements and Cr metal thickness confirm the differences in short-circuit current density using these two types of Si.
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