Self-Assembly of Quantum-Dot Molecules: Heterogeneous Nucleation of SiGe Islands on Si(100)
Xuan DengDepartment of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, Michigan 49931Mohan KrishnamurthyDepartment of Metallurgical and Materials Engineering, Michigan Technological University, Houghton, Michigan 49931
1998en
ABI
Abstract
We report on the formation of clusters of self-assembled quantum dots (termed quantum-dot molecules). Each cluster, typically consisting of four closely spaced SiGe islands, is formed by preferential nucleation around the edges of square pits. Uniform-sized pits are directly formed by controlled deposition of Si and C on the initial Si(100) surface, followed by the growth of a thin Si buffer layer. Formation of ${105}$ pit walls as precursors to island formation and elastic relaxation effects near the pits appear to influence island nucleation. Quantum-dot molecules may have potential applications in nanoelectronic devices and may exhibit novel electronic and optical properties.
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