Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon

Abstract

A microscopic model for metastability in hydrogenated amorphous silicon (a-Si:H) involving two-hydrogen-atom complexes is proposed. Metastable-defect formation occurs when this complex dissociates creating two interstitial H atoms which form Si dangling-bond-like defects at weak-bond sites. Annealing occurs when the H atoms reform complexes.

Identifiers

DOI

10.1103/physrevb.41.10257

Citations and references