Physical principles of the single-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>60</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>transistor effect
Christian JoachimCEMES-CNRS, 29 rue J. Marvig, Boîte Postale 4347, 31055 Toulouse Cedex, FranceJames K. GimzewskiCEMES-CNRS, 29 rue J. Marvig, Boîte Postale 4347, 31055 Toulouse Cedex, FranceHao TangCEMES-CNRS, 29 rue J. Marvig, Boîte Postale 4347, 31055 Toulouse Cedex, France
1998lv
ABI
Abstract
Starting with the physics of tunneling transport through a molecule, we describe the principles underlying electrical amplification effects of a ${\mathrm{C}}_{60}$ molecule. We discuss in detail the consequences of intramolecular electronic-level repulsion, an effect induced by compression of the molecule, which leads to an exponential variation of the current for a minute compression of the molecule. This detailed understanding underpins the ${\mathrm{C}}_{60}$ amplifier. Using a planar configuration and an independent electromechanical grid, a transistor effect results from this repulsion effect.
Not yet translated
Identifiers
Citations and references
Cited by 20 references