Electrical observation of the Au-Fe complex in silicon
S. D. BrothertonPhilips Research Laboratories, Cross Oak Lane, Salfords, Redhill, Surrey RH1 5HA, EnglandPeter D. BradleyPhilips Research Laboratories, Cross Oak Lane, Salfords, Redhill, Surrey RH1 5HA, EnglandA. GillPhilips Research Laboratories, Cross Oak Lane, Salfords, Redhill, Surrey RH1 5HA, EnglandE. R. WeberII Physikalisches Institut, University of Cologne, Cologne, Federal Republic of Germany
1984en
ABI
Abstract
Electron paramagnetic resonance (EPR) and diode capacitance measurements, including deep level transient spectroscopy (DLTS), have been used to identify the levels in the silicon band gap associated with the Au-Fe complex. Two deep levels at Ec−0.354 eV and Ev+0.434 eV were found with properties consistent with those of the complex; the role of gold in the formation of the complex was confirmed by the observation that during low-temperature annealing (<350 °C) the changes in the concentration of the center were accompanied by equal and opposite changes in the concentration of the normal gold acceptor and donor levels.
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