Transition photoelectric processes in a superfluid gas-discharge cell with semiconductor electrodes

Abstract

In this paper, transient photoelectric processes in a hyperfine gas-discharge cell were investigated. The issues of delay of the gas discharge breakdown in the pulsed mode of the cell operation and the electrostatic phenomena of the transient processes are considered. It is established that the breakdown delay time depends on the semiconductor illumination intensity, the duration and magnitude of the voltage pulse, and also the state of the surface charge, that is, the field strength of the surface charges.

Identifiers

DOI

10.5958/2249-7137.2020.00226.8

Citations and references