Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Abstract

Reduction of the bowing of GaN-on-sapphire and GaN-on-silicon substrates was demonstrated with an internally focused laser processing. Stress implantation was successfully achieved inside the sapphire and silicon substrates by the internally focused laser process to compensate for the strain generated by the GaN/sapphire and GaN/Si systems which resulted in substrate bow reduction. This new approach gives us a larger flexibility in the design engineering of epitaxial and device fabrication processes and thus accelerates the realization of a larger diameter device process with GaN-on-sapphire and GaN-on silicon.

Identifiers

DOI

10.1143/jjap.51.016504

Citations and references