Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy
Hiroki HibinoNTT Basic Research Laboratories , NTT Corporation, Atsugi, Kanagawa 243-0198, JapanMasashi UematsuNTT Basic Research Laboratories , NTT Corporation, Atsugi, Kanagawa 243-0198, JapanYoshio WatanabeNTT Basic Research Laboratories , NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
2006en
ABI
Abstract
Low-energy electron microscopy (LEEM) has been used to investigate void growth during thermal decomposition of 1–2-nm-thick silicon oxide on Si substrates. Real-time LEEM observations clarify that the void size (square root of the void area) grows linearly with time. The temperature dependence of the growth rate reveals that the activation energy of the void growth is about 4.0eV. We also find that the void density increases at faster rates in later stages of the oxide decomposition. This suggests that the nucleation is not initiated by a random single event. Additionally, we demonstrate that the voids become shallower because the void shape changes during the growth.
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Cited by 20 references