ELECTRONIC AND OPTICAL PROPERTIES OF TWO-DIMENSIONAL TRANSITION METAL DICHALCOGENIDES FOR NEXT-GENERATION OPTOELECTRONIC DEVICES
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have emerged as a transformative class of materials in the field of nanoelectronics and optoelectronics. This article investigates the electronic and optical properties of molybdenum disulfide (MoS2), focusing on the transition from an indirect bandgap in bulk form to a direct bandgap in a monolayer structure. The influence of quantum confinement on charge carrier mobility and exciton binding energy is analyzed through recent theoretical and experimental data. Our study highlights how the unique band structure of monolayer MoS2 enhances light-matter interactions, providing a significant advantage for next-generation field-effect transistors (FETs) and high-efficiency photodetectors. Furthermore, the challenges of integrating 2D materials into current semiconductor manufacturing processes are discussed, alongside potential solutions for enhancing device stability and performance.