Javohir Sh. Khudoykulov

Работ: 4

Department of Physics, National University of Uzbekistan, University Street 4, Tashkent 100174, Uzbekistan

1. NDR in Co:SnO ₂ Memristors: Nanocluster Control for Enhanced Performance

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingCrystal Growth & Design2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001458

2. Effect of SiO₂ and Post-Annealed Ga₂O₃ Buffer Layers on Ga₂O₃ Thin Film Growth and Properties

   Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

   СтатьяGa2O3 and related materialsCrystal Growth & Design2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.340347

3. Magnetically Tunable Resistive Switching in Mn-Doped SnO ₂ Thin Films

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяZnO doping and propertiesCrystal Growth & Design2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.013968

4. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.020423